rfq@cintymcu.com
Resumo do Produto
- Número da peça
- SI2315BDS-T1-E3
- Fabricante
- Vishay Semiconductors
- Categoria de Produto
- MOSFET
- Descrição
- MOSFET 1.8V 3.2A 1.25W
Documentos e mídia
- Folhas de dados
- SI2315BDS-T1-E3
Atributos do produto
- Channel Mode :
- Enhancement
- Id - Continuous Drain Current :
- 3 A
- Maximum Operating Temperature :
- + 150 C
- Minimum Operating Temperature :
- - 55 C
- Mounting Style :
- SMD/SMT
- Number of Channels :
- 1 Channel
- Package / Case :
- SOT-23-3
- Packaging :
- Cut Tape, MouseReel, Reel
- Pd - Power Dissipation :
- 750 mW
- Qg - Gate Charge :
- 8 nC
- Rds On - Drain-Source Resistance :
- 50 mOhms
- Technology :
- SI
- Tradename :
- TrenchFET
- Transistor Polarity :
- P-Channel
- Vds - Drain-Source Breakdown Voltage :
- 12 V
- Vgs - Gate-Source Voltage :
- - 8 V, + 8 V
- Vgs th - Gate-Source Threshold Voltage :
- 900 mV
Descrição
MOSFET 1.8V 3.2A 1.25W
Preço e Aquisição
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