rfq@cintymcu.com
Documentos e mídia
- Folhas de dados
- IXFX200N10P
Atributos do produto
- Channel Mode :
- Enhancement
- Id - Continuous Drain Current :
- 200 A
- Maximum Operating Temperature :
- + 175 C
- Minimum Operating Temperature :
- - 55 C
- Mounting Style :
- Through Hole
- Number of Channels :
- 1 Channel
- Package / Case :
- TO-247-3
- Packaging :
- Tube
- Pd - Power Dissipation :
- 830 W
- Qg - Gate Charge :
- 235 nC
- Rds On - Drain-Source Resistance :
- 7.5 mOhms
- Technology :
- SI
- Tradename :
- HiPerFET
- Transistor Polarity :
- N-Channel
- Vds - Drain-Source Breakdown Voltage :
- 100 V
- Vgs - Gate-Source Voltage :
- - 20 V, + 20 V
- Vgs th - Gate-Source Threshold Voltage :
- 2.5 V
Descrição
MOSFET 200 Amps 100V 0.0075 Rds
Preço e Aquisição
Produto Associado
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