rfq@cintymcu.com
Resumo do Produto
- Número da peça
- IRFIB6N60APBF
- Fabricante
- Vishay Semiconductors
- Categoria de Produto
- MOSFET
- Descrição
- MOSFET 600V N-CH HEXFET
Documentos e mídia
- Folhas de dados
- IRFIB6N60APBF
Atributos do produto
- Channel Mode :
- Enhancement
- Id - Continuous Drain Current :
- 5.5 A
- Maximum Operating Temperature :
- + 150 C
- Minimum Operating Temperature :
- - 55 C
- Mounting Style :
- Through Hole
- Number of Channels :
- 1 Channel
- Package / Case :
- TO-220-3
- Packaging :
- Tube
- Pd - Power Dissipation :
- 60 W
- Qg - Gate Charge :
- 49 nC
- Rds On - Drain-Source Resistance :
- 750 mOhms
- Technology :
- SI
- Transistor Polarity :
- N-Channel
- Vds - Drain-Source Breakdown Voltage :
- 600 V
- Vgs - Gate-Source Voltage :
- - 30 V, + 30 V
- Vgs th - Gate-Source Threshold Voltage :
- 2 V
Descrição
MOSFET 600V N-CH HEXFET
Preço e Aquisição
Produto Associado
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| FA-20H 16.0000MD30X-W | Epson Timing | 3,000 | Crystals SMD MHZ +/-30PPM+/-30PPM-40~85C 12PF BULK |
| FA-20H 48.0000MD30V-CX | Epson Timing | 3,000 | Crystals FA-20H 48.0000MD30V-CX: SMD XTAL MHZ +/-30PPM+/-30PPM-20~70C 18PF ANY TR |
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| FA-20H 32.0000MF10Z-AJ | Epson Timing | 3,000 | Crystals SMD MHZ +/-10PPM +/-10PPM -20~75C 8.0PF BULK |
| FA-20H 24.0000MA14R-KX | Epson Timing | 3,000 | Crystals FA-20H 24.0000MA14R-KX: XTAL +/-20PPM +/-14PPM-30~70C 10PF ANY TR |
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