rfq@cintymcu.com
Resumo do Produto
- Número da peça
- GS66506T-MR
- Fabricante
- GaN Systems
- Categoria de Produto
- MOSFET
- Descrição
- MOSFET 650V, 22A, GaN E-mode, GaNPX package, Top-side cooled
Documentos e mídia
- Folhas de dados
- GS66506T-MR
Atributos do produto
- Channel Mode :
- Enhancement
- Id - Continuous Drain Current :
- 22.5 A
- Maximum Operating Temperature :
- + 150 C
- Minimum Operating Temperature :
- - 55 C
- Mounting Style :
- SMD/SMT
- Number of Channels :
- 1 Channel
- Package / Case :
- Die
- Packaging :
- Cut Tape, MouseReel, Reel
- Pd - Power Dissipation :
- -
- Qg - Gate Charge :
- 4.5 nC
- Rds On - Drain-Source Resistance :
- 90 mOhms
- Technology :
- GaN-on-Si
- Tradename :
- GaNPX
- Transistor Polarity :
- N-Channel
- Vds - Drain-Source Breakdown Voltage :
- 650 V
- Vgs - Gate-Source Voltage :
- - 10 V, + 7 V
- Vgs th - Gate-Source Threshold Voltage :
- 1.1 V
Descrição
MOSFET 650V, 22A, GaN E-mode, GaNPX package, Top-side cooled
Preço e Aquisição
Produto Associado
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