rfq@cintymcu.com
Resumo do Produto
- Número da peça
- TP65H035G4WS
- Fabricante
- Transphorm
- Categoria de Produto
- MOSFET
- Descrição
- MOSFET GAN FET 650V 46.5A TO247
Documentos e mídia
- Folhas de dados
- TP65H035G4WS
Atributos do produto
- Channel Mode :
- Enhancement
- Id - Continuous Drain Current :
- 46.5 A
- Maximum Operating Temperature :
- + 150 C
- Minimum Operating Temperature :
- - 55 C
- Mounting Style :
- Through Hole
- Number of Channels :
- 1 Channel
- Package / Case :
- TO-247-3
- Packaging :
- Tube
- Pd - Power Dissipation :
- 156 W
- Qg - Gate Charge :
- 22 nC
- Rds On - Drain-Source Resistance :
- 41 mOhms
- Technology :
- GaN
- Tradename :
- SuperGaN
- Transistor Polarity :
- N-Channel
- Vds - Drain-Source Breakdown Voltage :
- 650 V
- Vgs - Gate-Source Voltage :
- - 20 V, + 20 V
- Vgs th - Gate-Source Threshold Voltage :
- 4.8 V
Descrição
MOSFET GAN FET 650V 46.5A TO247
Preço e Aquisição
Produto Associado
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