rfq@cintymcu.com
Resumo do Produto
- Número da peça
- SIRA18BDP-T1-GE3
- Fabricante
- Vishay Semiconductors
- Categoria de Produto
- MOSFET
- Descrição
- MOSFET N-CHANNEL 30-V (D-S) MOSFET
Documentos e mídia
- Folhas de dados
- SIRA18BDP-T1-GE3
Atributos do produto
- Channel Mode :
- Enhancement
- Id - Continuous Drain Current :
- 40 A
- Maximum Operating Temperature :
- + 150 C
- Minimum Operating Temperature :
- - 55 C
- Mounting Style :
- SMD/SMT
- Number of Channels :
- 1 Channel
- Package / Case :
- PowerPAK-SO-8
- Packaging :
- Cut Tape, MouseReel, Reel
- Pd - Power Dissipation :
- 17 W
- Qg - Gate Charge :
- 12.2 nC
- Rds On - Drain-Source Resistance :
- 6.83 mOhms
- Technology :
- SI
- Tradename :
- TrenchFET
- Transistor Polarity :
- N-Channel
- Vds - Drain-Source Breakdown Voltage :
- 30 V
- Vgs - Gate-Source Voltage :
- - 16 V, + 20 V
- Vgs th - Gate-Source Threshold Voltage :
- 2.4 V
Descrição
MOSFET N-CHANNEL 30-V (D-S) MOSFET
Preço e Aquisição
Produto Associado
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