Resumo do Produto

Número da peça
TPW2900ENH,L1Q
Fabricante
Toshiba
Categoria de Produto
MOSFET
Descrição
MOSFET POWER MOSFET TRANSISTOR

Documentos e mídia

Folhas de dados
TPW2900ENH,L1Q

Atributos do produto

Channel Mode :
Enhancement
Id - Continuous Drain Current :
36 A
Maximum Operating Temperature :
+ 150 C
Minimum Operating Temperature :
- 55 C
Mounting Style :
SMD/SMT
Number of Channels :
1 Channel
Package / Case :
DSOP-8
Packaging :
Cut Tape, MouseReel, Reel
Pd - Power Dissipation :
142 W
Qg - Gate Charge :
22 nC
Rds On - Drain-Source Resistance :
29 mOhms
Technology :
SI
Tradename :
U-MOSVIII-H
Transistor Polarity :
N-Channel
Vds - Drain-Source Breakdown Voltage :
200 V
Vgs - Gate-Source Voltage :
- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage :
2 V

Descrição

MOSFET POWER MOSFET TRANSISTOR

Preço e Aquisição

Produto Associado

  • Xilinx
    CPLD - Complex Programmable Logic Devices XC2C256-6VQG100C
  • Xilinx
    CPLD - Complex Programmable Logic Devices XC2C256-6TQG144C
  • Xilinx
    CPLD - Complex Programmable Logic Devices 3.3V 36-mc CPLD
  • Xilinx
    CPLD - Complex Programmable Logic Devices XC2C32A-6VQG44C
  • Xilinx
    CPLD - Complex Programmable Logic Devices 3.3V 72-mc CPLD
  • Xilinx
    CPLD - Complex Programmable Logic Devices XC2C64A-7VQG44C
  • Xilinx
    CPLD - Complex Programmable Logic Devices 3.3V 72-mc CPLD
  • Xilinx
    CPLD - Complex Programmable Logic Devices XC2C64A-7VQG44I
  • STMicroelectronics
    Microprocessors - MPU MPU ARM926 Cortex 8-ch DMA 32KB Rom
  • STMicroelectronics
    Embedded - CPLDs (Complex Programmable Logic Devices)

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