rfq@cintymcu.com
Resumo do Produto
- Número da peça
- STGWA50M65DF2
- Fabricante
- STMicroelectronics
- Categoria de Produto
- Transistores IGBT
- Descrição
- IGBT Transistors PTD IGBT & IPM
Documentos e mídia
- Folhas de dados
- STGWA50M65DF2
Atributos do produto
- Collector- Emitter Voltage VCEO Max :
- 650 V
- Collector-Emitter Saturation Voltage :
- 1.65 V
- Configuration :
- Single
- Continuous Collector Current at 25 C :
- 80 A
- Maximum Gate Emitter Voltage :
- 20 V
- Maximum Operating Temperature :
- + 175 C
- Minimum Operating Temperature :
- - 55 C
- Mounting Style :
- Through Hole
- Package / Case :
- TO-247-3
- Packaging :
- Tube
- Pd - Power Dissipation :
- 375 W
- Series :
- HB2
- Technology :
- SI
Descrição
IGBT Transistors PTD IGBT & IPM
Preço e Aquisição
Produto Associado
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