rfq@cintymcu.com
Resumo do Produto
- Número da peça
- BSM75GD120DN2
- Fabricante
- Infineon Technologies
- Categoria de Produto
- Módulos IGBT
- Descrição
- IGBT Modules 1200V 75A 3-PHASE
Documentos e mídia
- Folhas de dados
- BSM75GD120DN2
Atributos do produto
- Collector- Emitter Voltage VCEO Max :
- 1200 V
- Collector-Emitter Saturation Voltage :
- 2.5 V
- Configuration :
- Hex
- Continuous Collector Current at 25 C :
- 103 A
- Gate-Emitter Leakage Current :
- 320 nA
- Maximum Operating Temperature :
- + 150 C
- Minimum Operating Temperature :
- - 40 C
- Package / Case :
- EconoPACK 3A
- Packaging :
- Tray
- Pd - Power Dissipation :
- 520 W
- Product :
- IGBT Silicon Modules
Descrição
IGBT Modules 1200V 75A 3-PHASE
Preço e Aquisição
Produto Associado
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