Resumo do Produto
- Número da peça
- FS75R07N2E4
- Fabricante
- Infineon Technologies
- Categoria de Produto
- Módulos IGBT
- Descrição
- IGBT Modules IGBT Module 75A 650V
Documentos e mídia
- Folhas de dados
- FS75R07N2E4
Atributos do produto
- Collector- Emitter Voltage VCEO Max :
- 650 V
- Collector-Emitter Saturation Voltage :
- 1.55 V
- Configuration :
- IGBT-Inverter
- Continuous Collector Current at 25 C :
- 75 A
- Gate-Emitter Leakage Current :
- 400 nA
- Maximum Operating Temperature :
- + 150 C
- Minimum Operating Temperature :
- - 40 C
- Package / Case :
- Module
- Packaging :
- Tray
- Pd - Power Dissipation :
- 250 W
- Product :
- IGBT Silicon Modules
Descrição
IGBT Modules IGBT Module 75A 650V
Preço e Aquisição
Produto Associado
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