rfq@cintymcu.com
Resumo do Produto
- Número da peça
- T1G2028536-FL
- Fabricante
- Qorvo
- Categoria de Produto
- Transistores RF JFET
- Descrição
- RF JFET Transistors DC-2GHz P3dB 260W Gain 18dB@1.2GHz GaN
Documentos e mídia
- Folhas de dados
- T1G2028536-FL
Atributos do produto
- Gain :
- 20.8 dB
- Id - Continuous Drain Current :
- 24 A
- Maximum Drain Gate Voltage :
- 48 V
- Maximum Operating Temperature :
- + 275 C
- Mounting Style :
- SMD/SMT
- Operating Frequency :
- 2 GHz
- Output Power :
- 260 W
- Package / Case :
- NI-780
- Packaging :
- Tray
- Pd - Power Dissipation :
- 288 W
- Technology :
- GaN-on-SiC
- Transistor Polarity :
- N-Channel
- Transistor Type :
- HEMT
- Vds - Drain-Source Breakdown Voltage :
- 36 V
- Vgs - Gate-Source Breakdown Voltage :
- 145 V
Descrição
RF JFET Transistors DC-2GHz P3dB 260W Gain 18dB@1.2GHz GaN
Preço e Aquisição
Produto Associado
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