rfq@cintymcu.com
Resumo do Produto
- Número da peça
- WSL1206R0220FEA18
- Fabricante
- Vishay / Dale
- Categoria de Produto
- Resistores de detecção de corrente - SMD
- Descrição
- Current Sense Resistors - SMD 1/2watt .022ohms 1% High Power
Documentos e mídia
- Folhas de dados
- WSL1206R0220FEA18
Atributos do produto
- Case Code - in :
- 1206
- Case Code - mm :
- 3216
- Maximum Operating Temperature :
- + 170 C
- Minimum Operating Temperature :
- - 65 C
- Packaging :
- Cut Tape, MouseReel, Reel
- Power Rating :
- 500 mW (1/2 W)
- Qualification :
- AEC-Q200
- Resistance :
- 22 mOhms
- Series :
- WSL-18 High Power
- Technology :
- Metal Strip
- Temperature Coefficient :
- 75 PPM / C
- Termination :
- 2 Terminal
- Termination Style :
- SMD/SMT
- Tolerance :
- 1 %
Descrição
Current Sense Resistors - SMD 1/2watt .022ohms 1% High Power
Preço e Aquisição
Produto Associado
Você também pode estar interessado em
| Papel | Fabricante | Estoque | Descrição |
|---|---|---|---|
| BC 847CW H6433 | Infineon Technologies | 3,000 | Bipolar Transistors - BJT AF TRANSISTOR |
| BC817K25WH6433XTMA1 | Infineon Technologies | 3,000 | Bipolar Transistors - BJT NPN Silicon AF Transistor |
| BC 817K-25W H6433 | Infineon Technologies | 3,000 | Bipolar Transistors - BJT NPN Silicon AF Transistor |
| APT13003LZTR-G1 | Diodes Incorporated | 3,000 | Bipolar Transistors - BJT 465V NPN High Volt 700Vces 450Vceo |
| BC 857S H6827 | Infineon Technologies | 3,000 | Bipolar Transistors - BJT AF TRANSISTOR |
| BC857SH6327XT | Infineon Technologies | 3,000 | Bipolar Transistors - BJT AF TRANSISTOR |
| APT13003DZTR-G1 | Diodes Incorporated | 3,000 | Bipolar Transistors - BJT 250V NPN High Volt 700Vces 450Vceo 1.1W |
| BC846SH6727XTSA1 | Infineon Technologies | 3,000 | Bipolar Transistors - BJT AF TRANSISTOR |
| BC 846S H6727 | Infineon Technologies | 3,000 | Bipolar Transistors - BJT AF TRANSISTOR |
| BC847SH6433XTMA1 | Infineon Technologies | 3,000 | Bipolar Transistors - BJT AF TRANSISTOR |
| 2SA1955FVBTPL3Z | Toshiba | 3,000 | Bipolar Transistors - BJT PNP Trans -0.4A LN -12V VCEO |
| 2SA1955FVATPL3Z | Toshiba | 3,000 | Bipolar Transistors - BJT PNP Trans -0.4A LN -12V VCEO |
| BCV62AE6327HTSA1 | Infineon Technologies | 3,000 | Bipolar Transistors - BJT AF TRANS GP BJT PNP 30V 0.1A |
| BCV 61B E6433 | Infineon Technologies | 3,000 | Bipolar Transistors - BJT NPN Silicon Double Transistor 30V 100mA |
| APT13003SZTR-G1 | Diodes Incorporated | 3,000 | Bipolar Transistors - BJT 465V NPN High Volt 700Vces 450Vceo |
