Product overview
- Part Number
- QPD1011SR
- Manufacturer
- Qorvo
- Product Category
- RF JFET Transistors
- Description
- RF JFET Transistors .03-1.2GHz 7W 50V GaN
Documents & Media
- Datasheets
- QPD1011SR
Product Attributes
- Gain :
- 21 dB
- Id - Continuous Drain Current :
- 1.46 A
- Maximum Drain Gate Voltage :
- 55 V
- Maximum Operating Temperature :
- + 85 C
- Minimum Operating Temperature :
- - 40 C
- Mounting Style :
- SMD/SMT
- Operating Frequency :
- 30 MHz to 1200 MHz
- Output Power :
- 8.7 W
- Package / Case :
- SMD-8
- Packaging :
- Reel
- Pd - Power Dissipation :
- 13 W
- Technology :
- GaN-on-SiC
- Transistor Polarity :
- N-Channel
- Transistor Type :
- HEMT
- Vds - Drain-Source Breakdown Voltage :
- 50 V
- Vgs - Gate-Source Breakdown Voltage :
- 145 V
Description
RF JFET Transistors .03-1.2GHz 7W 50V GaN
Price & Procurement
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