Datasheets

GTVA107001EC-V1-R250

Gain :

18 dB

Id - Continuous Drain Current :

10 A

Maximum Drain Gate Voltage :

-

Mounting Style :

Screw Mount

Operating Frequency :

960 MHz to 1.215 GHz

Output Power :

890 W

Package / Case :

H-36248-2

Packaging :

Reel

Technology :

GaN-on-SiC

Transistor Polarity :

N-Channel

Transistor Type :

HEMT

Vds - Drain-Source Breakdown Voltage :

150 V

Vgs - Gate-Source Breakdown Voltage :

- 10 V to 2 V