sales@szcinty.com
Product overview
- Part Number
- CR1206-FX-53R6ELF
- Manufacturer
- Bourns
- Product Category
- Thick Film Resistors
- Description
- Thick Film Resistors - SMD 53.6ohm 1%
Documents & Media
- Datasheets
- CR1206-FX-53R6ELF
Product Attributes
- Application :
- General Purpose
- Case Code - in :
- 1206
- Case Code - mm :
- 3216
- Features :
- -
- Maximum Operating Temperature :
- + 155 C
- Minimum Operating Temperature :
- - 55 C
- Packaging :
- Cut Tape, MouseReel, Reel
- Power Rating :
- 250 mW (1/4 W)
- Resistance :
- 53.6 Ohms
- Series :
- CR1206
- Temperature Coefficient :
- 100 PPM / C
- Tolerance :
- 1 %
- Voltage Rating :
- 200 V
Description
Thick Film Resistors - SMD 53.6ohm 1%
Price & Procurement
Associated Product
You May Also Be Interested In
| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| IS61NVF51236B-7.5TQLI-TR | ISSI | 3,000 | SRAM 18Mb,"No-Wait"/Flowthrough,Sync,512K x 36,7.5ns,2.5v - I/O,100 Pin TQFP, RoHS |
| IS61NLF51236B-7.5TQLI-TR | ISSI | 3,000 | SRAM 18Mb,"No-Wait"/Flowthrough,Sync,512K x 36,7.5ns,3.3v/2.5v - I/O,100 Pin TQFP, RoHS |
| AS7C38096B-10BINTR | Alliance Memory | 3,000 | SRAM 8M, 3.3V, 10ns 1Mx8 Fast Async SRAM |
| AS7C38096A-10BINTR | Alliance Memory | 3,000 | SRAM 8M, 3.3V, 10ns, FAST 1M x 8 Asynch SRAM |
| AS7C38096A-10TINTR | Alliance Memory | 3,000 | SRAM 8M, 3.3V, 10ns, FAST 1M x 8 Asynch SRAM |
| AS7C38098A-10BINTR | Alliance Memory | 3,000 | SRAM 8M, 3.3V, 10ns, FAST 512K x 16 Asyn SRAM |
| AS7C38098A-10TINTR | Alliance Memory | 3,000 | SRAM 8M, 3.3V, 10ns, FAST 512K x 16 Asyn SRAM |
| IS61WV51216EDALL-20TLI-TR | ISSI | 3,000 | SRAM 8Mb,High-Speed/Low Power,Async with ECC,512K x 16, 20ns,1.65V-2.2V, 44 Pin TSOP II, RoHS |
| IS61QDPB42M36A-400M3LI | ISSI | 3,000 | SRAM 72Mb, QUAD (Burst of 4), Sync SRAM, 2M x 36, 2.5 Read Latency, 165 Ball FBGA (15x17 mm), RoHS |
| AS6C8008A-55BINTR | Alliance Memory | 3,000 | SRAM |
| IS61VPS102418B-250TQL-TR | ISSI | 3,000 | SRAM 18Mb,Pipeline,Sync,1Mb x 18,250MHz,3.3V or 2.5V I/O,100 Pin TQFP, RoHS |
| IS61WV25616EDALL-20BLI-TR | ISSI | 3,000 | SRAM 4Mb,High-Speed/Low Power,Async with ECC, 256K x 16, 20ns, 1.65V-2.2V, 48 Ball mBGA (6x8 mm), RoHS |
| IS61WV25616EDBLL-8BLI-TR | ISSI | 3,000 | SRAM 4Mb,High-Speed/Low Power,Async with ECC,256K x 16,8ns,3.3V,48 Ball mBGA (6x8 mm), RoHS |
| IS61NVF51236B-6.5TQL-TR | ISSI | 3,000 | SRAM 18Mb,"No-Wait"/Flowthrough,Sync,512K x 36,6.5ns,2.5v - I/O,100 Pin TQFP, RoHS |
| IS61LF51236B-6.5TQLI-TR | ISSI | 3,000 | SRAM 18Mb,Flow-Through,Sync,512K x 36,6.5ns,3.3v or 2.5V I/O, 100Pin TQFP, RoHS |
