Datasheets

SIZ256DT-T1-GE3

Id - Continuous Drain Current :

31.8 A

Maximum Operating Temperature :

+ 150 C

Minimum Operating Temperature :

- 55 C

Mounting Style :

SMD/SMT

Number of Channels :

1 Channel

Packaging :

Reel

Pd - Power Dissipation :

33 W

Qg - Gate Charge :

8.2 nC

Rds On - Drain-Source Resistance :

17.6 mOhms

Technology :

SI

Tradename :

TrenchFET

Transistor Polarity :

N-Channel

Vds - Drain-Source Breakdown Voltage :

70 V

Vgs - Gate-Source Voltage :

- 12 V, + 12 V

Vgs th - Gate-Source Threshold Voltage :

1.5 V