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Documents & Media
- Datasheets
- IXFT20N100P
Product Attributes
- Channel Mode :
- Enhancement
- Id - Continuous Drain Current :
- 20 A
- Maximum Operating Temperature :
- + 150 C
- Minimum Operating Temperature :
- - 55 C
- Mounting Style :
- SMD/SMT
- Number of Channels :
- 1 Channel
- Package / Case :
- TO-268-3
- Packaging :
- Tube
- Pd - Power Dissipation :
- 660 W
- Qg - Gate Charge :
- 126 nC
- Rds On - Drain-Source Resistance :
- 570 mOhms
- Technology :
- SI
- Tradename :
- HiPerFET
- Transistor Polarity :
- N-Channel
- Vds - Drain-Source Breakdown Voltage :
- 1 kV
- Vgs - Gate-Source Voltage :
- - 30 V, + 30 V
- Vgs th - Gate-Source Threshold Voltage :
- 6.5 V
Description
MOSFET 20 Amps 1000V 1 Rds
Price & Procurement
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