Datasheets

SI2316DS-T1-GE3

Channel Mode :

Enhancement

Id - Continuous Drain Current :

2.9 A

Maximum Operating Temperature :

+ 150 C

Minimum Operating Temperature :

- 55 C

Mounting Style :

SMD/SMT

Number of Channels :

1 Channel

Package / Case :

TO-236-3

Packaging :

Reel

Pd - Power Dissipation :

700 mW

Qg - Gate Charge :

4.3 nC

Rds On - Drain-Source Resistance :

50 mOhms

Technology :

SI

Tradename :

TrenchFET

Transistor Polarity :

N-Channel

Vds - Drain-Source Breakdown Voltage :

30 V

Vgs - Gate-Source Voltage :

- 20 V, + 20 V

Vgs th - Gate-Source Threshold Voltage :

800 mV