sales@szcinty.com
Product overview
- Part Number
- G2R120MT33J
- Manufacturer
- GeneSiC Semiconductor
- Product Category
- MOSFET
- Description
- MOSFET 3300V 120mO TO-263-7 G2R SiC MOSFET
Documents & Media
- Datasheets
- G2R120MT33J
Product Attributes
- Channel Mode :
- Enhancement
- Id - Continuous Drain Current :
- 34 A
- Maximum Operating Temperature :
- + 175 C
- Minimum Operating Temperature :
- - 55 C
- Mounting Style :
- SMD/SMT
- Number of Channels :
- 1 Channel
- Package / Case :
- TO-263-7
- Packaging :
- Tube
- Pd - Power Dissipation :
- 366 W
- Qg - Gate Charge :
- 130 nC
- Rds On - Drain-Source Resistance :
- 120 mOhms
- Technology :
- SiC
- Transistor Polarity :
- N-Channel
- Vds - Drain-Source Breakdown Voltage :
- 3.3 kV
- Vgs - Gate-Source Voltage :
- - 5 V, + 20 V
- Vgs th - Gate-Source Threshold Voltage :
- 4.5 V
Description
MOSFET 3300V 120mO TO-263-7 G2R SiC MOSFET
Price & Procurement
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