Product overview

Part Number
LSIC1MO120G0160
Manufacturer
Littelfuse
Product Category
MOSFET
Description
MOSFET 1200 V, 160 mOhm N-Channel SiC MOSFET (TO247-4L)

Documents & Media

Datasheets
LSIC1MO120G0160

Product Attributes

Channel Mode :
Enhancement
Id - Continuous Drain Current :
22 A
Maximum Operating Temperature :
+ 175 C
Minimum Operating Temperature :
- 55 C
Mounting Style :
Through Hole
Number of Channels :
1 Channel
Package / Case :
TO-247-4
Packaging :
Tube
Pd - Power Dissipation :
125 W
Qg - Gate Charge :
50 nC
Rds On - Drain-Source Resistance :
200 mOhms
Technology :
SiC
Transistor Polarity :
N-Channel
Vds - Drain-Source Breakdown Voltage :
1.2 kV
Vgs - Gate-Source Voltage :
- 5 V, + 20 V
Vgs th - Gate-Source Threshold Voltage :
4 V

Description

MOSFET 1200 V, 160 mOhm N-Channel SiC MOSFET (TO247-4L)

Price & Procurement

Associated Product

  • Xilinx
    CPLD - Complex Programmable Logic Devices XC2C256-6VQG100C
  • Xilinx
    CPLD - Complex Programmable Logic Devices XC2C256-6TQG144C
  • Xilinx
    CPLD - Complex Programmable Logic Devices 3.3V 36-mc CPLD
  • Xilinx
    CPLD - Complex Programmable Logic Devices XC2C32A-6VQG44C
  • Xilinx
    CPLD - Complex Programmable Logic Devices 3.3V 72-mc CPLD
  • Xilinx
    CPLD - Complex Programmable Logic Devices XC2C64A-7VQG44C
  • Xilinx
    CPLD - Complex Programmable Logic Devices 3.3V 72-mc CPLD
  • Xilinx
    CPLD - Complex Programmable Logic Devices XC2C64A-7VQG44I
  • STMicroelectronics
    Microprocessors - MPU MPU ARM926 Cortex 8-ch DMA 32KB Rom
  • STMicroelectronics
    Embedded - CPLDs (Complex Programmable Logic Devices)

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