Product overview
- Part Number
- BTS282ZE3230AKSA2
- Manufacturer
- Infineon Technologies
- Product Category
- MOSFET
- Description
- MOSFET HITFET
Documents & Media
- Datasheets
- BTS282ZE3230AKSA2
Product Attributes
- Channel Mode :
- Enhancement
- Id - Continuous Drain Current :
- 80 A
- Maximum Operating Temperature :
- + 150 C
- Minimum Operating Temperature :
- - 55 C
- Mounting Style :
- Through Hole
- Number of Channels :
- 1 Channel
- Package / Case :
- TO-220-7
- Packaging :
- Tube
- Pd - Power Dissipation :
- 300 W
- Qg - Gate Charge :
- 232 nC
- Qualification :
- AEC-Q101
- Rds On - Drain-Source Resistance :
- 5.8 mOhms
- Technology :
- SI
- Transistor Polarity :
- N-Channel
- Vds - Drain-Source Breakdown Voltage :
- 49 V
- Vgs - Gate-Source Voltage :
- - 20 V, + 20 V
- Vgs th - Gate-Source Threshold Voltage :
- 1.2 V
Description
MOSFET HITFET
Price & Procurement
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