Product overview
- Part Number
- IPG20N06S4L11AATMA1
- Manufacturer
- Infineon Technologies
- Product Category
- MOSFET
- Description
- MOSFET N-CHANNEL_55/60V
Documents & Media
- Datasheets
- IPG20N06S4L11AATMA1
Product Attributes
- Channel Mode :
- Enhancement
- Id - Continuous Drain Current :
- 20 A
- Maximum Operating Temperature :
- + 175 C
- Minimum Operating Temperature :
- - 55 C
- Mounting Style :
- SMD/SMT
- Number of Channels :
- 2 Channel
- Package / Case :
- TDSON-8
- Packaging :
- Cut Tape, Reel
- Pd - Power Dissipation :
- 65 W
- Qg - Gate Charge :
- 53 nC
- Qualification :
- AEC-Q101
- Rds On - Drain-Source Resistance :
- 15.8 mOhms
- Technology :
- SI
- Tradename :
- OptiMOS
- Transistor Polarity :
- N-Channel
- Vds - Drain-Source Breakdown Voltage :
- 60 V
- Vgs - Gate-Source Voltage :
- - 16 V, + 16 V
- Vgs th - Gate-Source Threshold Voltage :
- 1.2 V
Description
MOSFET N-CHANNEL_55/60V
Price & Procurement
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