Product overview

Part Number
IPB019N08N3GATMA1
Manufacturer
Infineon Technologies
Product Category
MOSFET
Description
MOSFET N-Ch 80V 180A D2PAK-6 OptiMOS 3

Documents & Media

Datasheets
IPB019N08N3GATMA1

Product Attributes

Channel Mode :
Enhancement
Id - Continuous Drain Current :
180 A
Maximum Operating Temperature :
+ 175 C
Minimum Operating Temperature :
- 55 C
Mounting Style :
SMD/SMT
Number of Channels :
1 Channel
Package / Case :
TO-263-7
Packaging :
Cut Tape, MouseReel, Reel
Pd - Power Dissipation :
300 W
Qg - Gate Charge :
206 nC
Rds On - Drain-Source Resistance :
1.6 mOhms
Technology :
SI
Tradename :
OptiMOS
Transistor Polarity :
N-Channel
Vds - Drain-Source Breakdown Voltage :
80 V
Vgs - Gate-Source Voltage :
- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage :
2 V

Description

MOSFET N-Ch 80V 180A D2PAK-6 OptiMOS 3

Price & Procurement

Associated Product

  • Xilinx
    CPLD - Complex Programmable Logic Devices XC2C256-6VQG100C
  • Xilinx
    CPLD - Complex Programmable Logic Devices XC2C256-6TQG144C
  • Xilinx
    CPLD - Complex Programmable Logic Devices 3.3V 36-mc CPLD
  • Xilinx
    CPLD - Complex Programmable Logic Devices XC2C32A-6VQG44C
  • Xilinx
    CPLD - Complex Programmable Logic Devices 3.3V 72-mc CPLD
  • Xilinx
    CPLD - Complex Programmable Logic Devices XC2C64A-7VQG44C
  • Xilinx
    CPLD - Complex Programmable Logic Devices 3.3V 72-mc CPLD
  • Xilinx
    CPLD - Complex Programmable Logic Devices XC2C64A-7VQG44I
  • STMicroelectronics
    Microprocessors - MPU MPU ARM926 Cortex 8-ch DMA 32KB Rom
  • STMicroelectronics
    Embedded - CPLDs (Complex Programmable Logic Devices)

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