sales@szcinty.com
Product overview
- Part Number
- SCT3080ALGC11
- Manufacturer
- ROHM Semiconductor
- Product Category
- MOSFET
- Description
- MOSFET N-Ch 650V 30A Silicon Carbide SiC
Documents & Media
- Datasheets
- SCT3080ALGC11
Product Attributes
- Channel Mode :
- Enhancement
- Id - Continuous Drain Current :
- 30 A
- Maximum Operating Temperature :
- + 175 C
- Minimum Operating Temperature :
- - 55 C
- Mounting Style :
- Through Hole
- Number of Channels :
- 1 Channel
- Package / Case :
- TO-247-3
- Packaging :
- Tube
- Pd - Power Dissipation :
- 134 W
- Qg - Gate Charge :
- 48 nC
- Rds On - Drain-Source Resistance :
- 80 mOhms
- Technology :
- SiC
- Transistor Polarity :
- N-Channel
- Vds - Drain-Source Breakdown Voltage :
- 650 V
- Vgs - Gate-Source Voltage :
- - 4 V, + 22 V
- Vgs th - Gate-Source Threshold Voltage :
- 2.7 V
Description
MOSFET N-Ch 650V 30A Silicon Carbide SiC
Price & Procurement
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