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Product overview
- Part Number
- SI3459BDV-T1-GE3
- Manufacturer
- Vishay Semiconductors
- Product Category
- MOSFET
- Description
- MOSFET -60V Vds 20V Vgs TSOP-6
Documents & Media
- Datasheets
- SI3459BDV-T1-GE3
Product Attributes
- Channel Mode :
- Enhancement
- Id - Continuous Drain Current :
- 2.9 A
- Maximum Operating Temperature :
- + 150 C
- Minimum Operating Temperature :
- - 55 C
- Mounting Style :
- SMD/SMT
- Number of Channels :
- 1 Channel
- Package / Case :
- TSOP-6
- Packaging :
- Cut Tape, MouseReel, Reel
- Pd - Power Dissipation :
- 3.3 W
- Qg - Gate Charge :
- 7.7 nC
- Rds On - Drain-Source Resistance :
- 216 mOhms
- Technology :
- SI
- Tradename :
- TrenchFET
- Transistor Polarity :
- P-Channel
- Vds - Drain-Source Breakdown Voltage :
- 60 V
- Vgs - Gate-Source Voltage :
- - 20 V, + 20 V
- Vgs th - Gate-Source Threshold Voltage :
- 3 V
Description
MOSFET -60V Vds 20V Vgs TSOP-6
Price & Procurement
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