sales@szcinty.com
Product overview
- Part Number
- SIHB22N60E-GE3
- Manufacturer
- Vishay Semiconductors
- Product Category
- MOSFET
- Description
- MOSFET 600V Vds 30V Vgs D2PAK (TO-263)
Documents & Media
- Datasheets
- SIHB22N60E-GE3
Product Attributes
- Channel Mode :
- Enhancement
- Id - Continuous Drain Current :
- 21 A
- Maximum Operating Temperature :
- + 150 C
- Minimum Operating Temperature :
- - 55 C
- Mounting Style :
- SMD/SMT
- Number of Channels :
- 1 Channel
- Package / Case :
- TO-263-3
- Packaging :
- Tube
- Pd - Power Dissipation :
- 227 W
- Qg - Gate Charge :
- 57 nC
- Rds On - Drain-Source Resistance :
- 180 mOhms
- Technology :
- SI
- Transistor Polarity :
- N-Channel
- Vds - Drain-Source Breakdown Voltage :
- 650 V
- Vgs - Gate-Source Voltage :
- - 30 V, + 30 V
- Vgs th - Gate-Source Threshold Voltage :
- 4 V
Description
MOSFET 600V Vds 30V Vgs D2PAK (TO-263)
Price & Procurement
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