sales@szcinty.com
Product overview
- Part Number
- STU1HN60K3
- Manufacturer
- STMicroelectronics
- Product Category
- MOSFET
- Description
- MOSFET N-Ch 6.4 Ohm 1.2A SuperMesh3 IPAK
Documents & Media
- Datasheets
- STU1HN60K3
Product Attributes
- Channel Mode :
- Enhancement
- Id - Continuous Drain Current :
- 1.2 A
- Maximum Operating Temperature :
- + 150 C
- Minimum Operating Temperature :
- - 55 C
- Mounting Style :
- Through Hole
- Number of Channels :
- 1 Channel
- Package / Case :
- TO-251-3
- Packaging :
- Tube
- Pd - Power Dissipation :
- 27 W
- Qg - Gate Charge :
- 9.5 nC
- Rds On - Drain-Source Resistance :
- 6.7 Ohms
- Technology :
- SI
- Tradename :
- SuperMESH
- Transistor Polarity :
- N-Channel
- Vds - Drain-Source Breakdown Voltage :
- 600 V
- Vgs - Gate-Source Voltage :
- - 30 V, + 30 V
- Vgs th - Gate-Source Threshold Voltage :
- 3.75 V
Description
MOSFET N-Ch 6.4 Ohm 1.2A SuperMesh3 IPAK
Price & Procurement
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