Product overview

Part Number
SIS412DN-T1-GE3
Manufacturer
Vishay Semiconductors
Product Category
MOSFET
Description
MOSFET 30V Vds 20V Vgs PowerPAK 1212-8

Documents & Media

Datasheets
SIS412DN-T1-GE3

Product Attributes

Channel Mode :
Enhancement
Id - Continuous Drain Current :
12 A
Maximum Operating Temperature :
+ 150 C
Minimum Operating Temperature :
- 55 C
Mounting Style :
SMD/SMT
Number of Channels :
1 Channel
Package / Case :
PowerPAK-1212-8
Packaging :
Cut Tape, MouseReel, Reel
Pd - Power Dissipation :
10 W
Qg - Gate Charge :
8 nC
Rds On - Drain-Source Resistance :
24 mOhms
Technology :
SI
Tradename :
TrenchFET, PowerPAK
Transistor Polarity :
N-Channel
Vds - Drain-Source Breakdown Voltage :
30 V
Vgs - Gate-Source Voltage :
- 10 V, + 10 V
Vgs th - Gate-Source Threshold Voltage :
1 V

Description

MOSFET 30V Vds 20V Vgs PowerPAK 1212-8

Price & Procurement

Associated Product

  • Xilinx
    CPLD - Complex Programmable Logic Devices XC2C256-6VQG100C
  • Xilinx
    CPLD - Complex Programmable Logic Devices XC2C256-6TQG144C
  • Xilinx
    CPLD - Complex Programmable Logic Devices 3.3V 36-mc CPLD
  • Xilinx
    CPLD - Complex Programmable Logic Devices XC2C32A-6VQG44C
  • Xilinx
    CPLD - Complex Programmable Logic Devices 3.3V 72-mc CPLD
  • Xilinx
    CPLD - Complex Programmable Logic Devices XC2C64A-7VQG44C
  • Xilinx
    CPLD - Complex Programmable Logic Devices 3.3V 72-mc CPLD
  • Xilinx
    CPLD - Complex Programmable Logic Devices XC2C64A-7VQG44I
  • STMicroelectronics
    Microprocessors - MPU MPU ARM926 Cortex 8-ch DMA 32KB Rom
  • STMicroelectronics
    Embedded - CPLDs (Complex Programmable Logic Devices)

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