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Documents & Media
- Datasheets
- UF3C120150K4S
Product Attributes
- Channel Mode :
- Enhancement
- Id - Continuous Drain Current :
- 18.4 A
- Maximum Operating Temperature :
- + 175 C
- Minimum Operating Temperature :
- - 55 C
- Mounting Style :
- Through Hole
- Number of Channels :
- 1 Channel
- Package / Case :
- TO-247-4
- Packaging :
- Tube
- Pd - Power Dissipation :
- 166.7 W
- Qg - Gate Charge :
- 25.7 nC
- Qualification :
- AEC-Q101
- Rds On - Drain-Source Resistance :
- 330 mOhms
- Technology :
- SiC
- Tradename :
- SiC FET
- Transistor Polarity :
- N-Channel
- Vds - Drain-Source Breakdown Voltage :
- 1.2 kV
- Vgs - Gate-Source Voltage :
- - 25 V, + 25 V
- Vgs th - Gate-Source Threshold Voltage :
- 3.5 V
Description
MOSFET 1200V/150mOhm, SiC, FAST CASCODE, G3, TO-247-4L, REDUCED Rth
Price & Procurement
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