Product overview
- Part Number
- SCTH35N65G2V-7
- Manufacturer
- STMicroelectronics
- Product Category
- MOSFET
- Description
- MOSFET PTD NEW MAT & PWR SOLUTION
Documents & Media
- Datasheets
- SCTH35N65G2V-7
Product Attributes
- Channel Mode :
- Enhancement
- Id - Continuous Drain Current :
- 45 A
- Maximum Operating Temperature :
- + 175 C
- Minimum Operating Temperature :
- - 55 C
- Mounting Style :
- SMD/SMT
- Number of Channels :
- 1 Channel
- Package / Case :
- H2PAK-7
- Packaging :
- Cut Tape, Reel
- Pd - Power Dissipation :
- 208 W
- Qg - Gate Charge :
- 73 nC
- Rds On - Drain-Source Resistance :
- 67 mOhms
- Technology :
- SiC
- Transistor Polarity :
- N-Channel
- Vds - Drain-Source Breakdown Voltage :
- 650 V
- Vgs - Gate-Source Voltage :
- - 10 V, + 22 V
- Vgs th - Gate-Source Threshold Voltage :
- 5 V
Description
MOSFET PTD NEW MAT & PWR SOLUTION
Price & Procurement
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