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Product overview
- Part Number
- SISS63DN-T1-GE3
- Manufacturer
- Vishay Semiconductors
- Product Category
- MOSFET
- Description
- MOSFET P-CHANNEL 20V PowerPAK 1212-8S
Documents & Media
- Datasheets
- SISS63DN-T1-GE3
Product Attributes
- Channel Mode :
- Enhancement
- Id - Continuous Drain Current :
- 127.5 A
- Maximum Operating Temperature :
- + 150 C
- Minimum Operating Temperature :
- - 55 C
- Mounting Style :
- SMD/SMT
- Number of Channels :
- 1 Channel
- Package / Case :
- PowerPAK-SO-8
- Packaging :
- Cut Tape, MouseReel, Reel
- Pd - Power Dissipation :
- 65.8 W
- Qg - Gate Charge :
- 72.2 nC, 157.2 nC
- Rds On - Drain-Source Resistance :
- 2.7 mOhms
- Technology :
- SI
- Tradename :
- TrenchFET
- Transistor Polarity :
- P-Channel
- Vds - Drain-Source Breakdown Voltage :
- 20 V
- Vgs - Gate-Source Voltage :
- - 12 V, + 12 V
- Vgs th - Gate-Source Threshold Voltage :
- 1.5 V
Description
MOSFET P-CHANNEL 20V PowerPAK 1212-8S
Price & Procurement
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