sales@szcinty.com
Documents & Media
- Datasheets
- IFN425
Product Attributes
- Configuration :
- Dual
- Drain-Source Current at Vgs=0 :
- 1800 uA
- Gate-Source Cutoff Voltage :
- - 3 V
- Mounting Style :
- Through Hole
- Package / Case :
- TO-78-8
- Packaging :
- Bulk
- Pd - Power Dissipation :
- 750 mW
- Technology :
- SI
- Transistor Polarity :
- N-Channel
- Vgs - Gate-Source Breakdown Voltage :
- - 40 V
Description
JFET Dual N-Ch JFET -60V 400mW 750mW
Price & Procurement
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