sales@szcinty.com
Documents & Media
- Datasheets
- IFN5566
Product Attributes
- Configuration :
- Dual
- Drain-Source Current at Vgs=0 :
- 30 mA
- Gate-Source Cutoff Voltage :
- - 3 V
- Mounting Style :
- Through Hole
- Package / Case :
- TO-71-6
- Packaging :
- Bulk
- Pd - Power Dissipation :
- 650 mW
- Rds On - Drain-Source Resistance :
- 100 Ohms
- Technology :
- SI
- Transistor Polarity :
- N-Channel
- Vgs - Gate-Source Breakdown Voltage :
- - 40 V
Description
JFET N-Ch Dual JFET -40V 50mA 650mW 3.3mW
Price & Procurement
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