Product overview
- Part Number
- IXYH90N65A5
- Manufacturer
- IXYS
- Product Category
- IGBT Transistors
- Description
- IGBT Transistors XPT thin-wafer technology, 5th generation (GenX5 ) Trench IGBT. Disc IGBT XPT-GenX5 TO247
Documents & Media
- Datasheets
- IXYH90N65A5
Product Attributes
- Collector- Emitter Voltage VCEO Max :
- 650 V
- Collector-Emitter Saturation Voltage :
- 1.22 V
- Configuration :
- Single
- Continuous Collector Current at 25 C :
- 220 A
- Maximum Gate Emitter Voltage :
- 20 V
- Maximum Operating Temperature :
- + 175 C
- Minimum Operating Temperature :
- - 55 C
- Mounting Style :
- Through Hole
- Package / Case :
- TO-247-3
- Packaging :
- Tube
- Pd - Power Dissipation :
- 650 W
- Technology :
- SI
Description
IGBT Transistors XPT thin-wafer technology, 5th generation (GenX5 ) Trench IGBT. Disc IGBT XPT-GenX5 TO247
Price & Procurement
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