Product overview

Part Number
RGS30TSX2GC11
Manufacturer
ROHM Semiconductor
Product Category
IGBT Transistors
Description
IGBT Transistors FIELD STOP TRENCH IGBT

Documents & Media

Datasheets
RGS30TSX2GC11

Product Attributes

Collector- Emitter Voltage VCEO Max :
1200 V
Collector-Emitter Saturation Voltage :
2.1 V
Configuration :
Single
Continuous Collector Current at 25 C :
30 A
Maximum Gate Emitter Voltage :
30 V
Maximum Operating Temperature :
+ 175 C
Minimum Operating Temperature :
- 40 C
Mounting Style :
Through Hole
Package / Case :
TO-247N-3
Packaging :
Tube
Pd - Power Dissipation :
267 W
Technology :
SI

Description

IGBT Transistors FIELD STOP TRENCH IGBT

Price & Procurement

Associated Product

  • Xilinx
    CPLD - Complex Programmable Logic Devices XC2C256-6VQG100C
  • Xilinx
    CPLD - Complex Programmable Logic Devices XC2C256-6TQG144C
  • Xilinx
    CPLD - Complex Programmable Logic Devices 3.3V 36-mc CPLD
  • Xilinx
    CPLD - Complex Programmable Logic Devices XC2C32A-6VQG44C
  • Xilinx
    CPLD - Complex Programmable Logic Devices 3.3V 72-mc CPLD
  • Xilinx
    CPLD - Complex Programmable Logic Devices XC2C64A-7VQG44C
  • Xilinx
    CPLD - Complex Programmable Logic Devices 3.3V 72-mc CPLD
  • Xilinx
    CPLD - Complex Programmable Logic Devices XC2C64A-7VQG44I
  • STMicroelectronics
    Microprocessors - MPU MPU ARM926 Cortex 8-ch DMA 32KB Rom
  • STMicroelectronics
    Embedded - CPLDs (Complex Programmable Logic Devices)

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