Product overview
- Part Number
- APT50GN120L2DQ2G
- Manufacturer
- Microsemi / Microchip
- Product Category
- IGBT Transistors
- Description
- IGBT Transistors FG, IGBT-COMBI, 1200V, TO-264 MAX, RoHS
Documents & Media
- Datasheets
- APT50GN120L2DQ2G
Product Attributes
- Collector- Emitter Voltage VCEO Max :
- 1.2 kV
- Collector-Emitter Saturation Voltage :
- 1.7 V
- Configuration :
- Single
- Continuous Collector Current at 25 C :
- 134 A
- Maximum Gate Emitter Voltage :
- 30 V
- Maximum Operating Temperature :
- + 150 C
- Minimum Operating Temperature :
- - 55 C
- Mounting Style :
- Through Hole
- Package / Case :
- TO-264-3
- Packaging :
- Tube
- Pd - Power Dissipation :
- 543 W
- Technology :
- SI
Description
IGBT Transistors FG, IGBT-COMBI, 1200V, TO-264 MAX, RoHS
Price & Procurement
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