sales@szcinty.com
Product overview
- Part Number
- STGWT80H65DFB
- Manufacturer
- STMicroelectronics
- Product Category
- IGBT Transistors
- Description
- IGBT Transistors Trench gate H series 650V 80A HiSpd
Documents & Media
- Datasheets
- STGWT80H65DFB
Product Attributes
- Collector- Emitter Voltage VCEO Max :
- 650 V
- Collector-Emitter Saturation Voltage :
- 1.6 V
- Configuration :
- Single
- Continuous Collector Current at 25 C :
- 120 A
- Maximum Gate Emitter Voltage :
- 20 V
- Maximum Operating Temperature :
- + 175 C
- Minimum Operating Temperature :
- - 55 C
- Mounting Style :
- Through Hole
- Package / Case :
- TO-3P
- Packaging :
- Tube
- Pd - Power Dissipation :
- 469 W
- Series :
- STGWT80H65DFB
- Technology :
- SI
Description
IGBT Transistors Trench gate H series 650V 80A HiSpd
Price & Procurement
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