sales@szcinty.com
Product overview
- Part Number
- GT50JR21(STA1,E,S)
- Manufacturer
- Toshiba
- Product Category
- IGBT Transistors
- Description
- IGBT Transistors LOW SATURATION/FAST SWITCHING
Documents & Media
- Datasheets
- GT50JR21(STA1,E,S)
Product Attributes
- Collector- Emitter Voltage VCEO Max :
- 600 V
- Collector-Emitter Saturation Voltage :
- 1.45 V
- Configuration :
- Single
- Continuous Collector Current at 25 C :
- 50 A
- Maximum Gate Emitter Voltage :
- 25 V
- Maximum Operating Temperature :
- + 175 C
- Minimum Operating Temperature :
- - 55 C
- Mounting Style :
- Through Hole
- Package / Case :
- TO-3PN-3
- Packaging :
- Tube
- Pd - Power Dissipation :
- 230 W
- Series :
- GT50JR21
- Technology :
- SI
Description
IGBT Transistors LOW SATURATION/FAST SWITCHING
Price & Procurement
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