sales@szcinty.com
Product overview
- Part Number
- APTGTQ100DA65T1G
- Manufacturer
- Microsemi / Microchip
- Product Category
- IGBT Modules
- Description
- IGBT Modules CC8123
Documents & Media
- Datasheets
- APTGTQ100DA65T1G
Product Attributes
- Collector- Emitter Voltage VCEO Max :
- 650 V
- Collector-Emitter Saturation Voltage :
- 1.65 V
- Configuration :
- Single
- Continuous Collector Current at 25 C :
- 100 A
- Gate-Emitter Leakage Current :
- 240 nA
- Maximum Operating Temperature :
- + 125 C
- Minimum Operating Temperature :
- - 40 C
- Package / Case :
- SP1
- Packaging :
- Tube
- Pd - Power Dissipation :
- 250 W
- Product :
- IGBT Silicon Modules
Description
IGBT Modules CC8123
Price & Procurement
Associated Product
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