sales@szcinty.com
Product overview
- Part Number
- RN1106MFV,L3XHF(CT
- Manufacturer
- Toshiba
- Product Category
- Bipolar Transistors - Pre-Biased
- Description
- Bipolar Transistors - Pre-Biased AUTO AEC-Q NPN Q1BSR=4.7kO, Q1BER=47kO, VCEO=50V, IC=0.1A (SOT-723)
Documents & Media
- Datasheets
- RN1106MFV,L3XHF(CT
Product Attributes
- Collector- Emitter Voltage VCEO Max :
- 50 V
- Configuration :
- Single
- Continuous Collector Current :
- 100 mA
- DC Collector/Base Gain hfe Min :
- 80 at 10 mA, 5 V
- Maximum Operating Temperature :
- + 150 C
- Mounting Style :
- SMD/SMT
- Package / Case :
- VESM-3
- Packaging :
- Cut Tape, MouseReel, Reel
- Pd - Power Dissipation :
- 150 mW
- Transistor Polarity :
- NPN
- Typical Input Resistor :
- 4.7 kOhms
- Typical Resistor Ratio :
- 0.1
Description
Bipolar Transistors - Pre-Biased AUTO AEC-Q NPN Q1BSR=4.7kO, Q1BER=47kO, VCEO=50V, IC=0.1A (SOT-723)
Price & Procurement
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