Product overview
- Part Number
- 2N4900 TIN/LEAD
- Manufacturer
- Central Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Description
- Bipolar Transistors - BJT PNP 1.0A 25W 80Vcbo 80Vceo 0.6V
Documents & Media
- Datasheets
- 2N4900 TIN/LEAD
Product Attributes
- Collector- Base Voltage VCBO :
- 80 V
- Collector- Emitter Voltage VCEO Max :
- 80 V
- Collector-Emitter Saturation Voltage :
- 0.6 V
- Configuration :
- Single
- Emitter- Base Voltage VEBO :
- -
- Gain Bandwidth Product fT :
- 3 MHz
- Maximum DC Collector Current :
- -
- Mounting Style :
- Through Hole
- Package / Case :
- TO-66-2
- Packaging :
- Tube
- Pd - Power Dissipation :
- 25 W
- Series :
- 2N4900
- Transistor Polarity :
- PNP
Description
Bipolar Transistors - BJT PNP 1.0A 25W 80Vcbo 80Vceo 0.6V
Price & Procurement
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