Product overview

Part Number
2N5322 TIN/LEAD
Manufacturer
Central Semiconductor
Product Category
Bipolar Transistors - BJT
Description
Bipolar Transistors - BJT 100Vcbo 100Vcev 2A 75Vceo 6.0Vebo 10W

Documents & Media

Datasheets
2N5322 TIN/LEAD

Product Attributes

Collector- Base Voltage VCBO :
100 V
Collector- Emitter Voltage VCEO Max :
75 V
Collector-Emitter Saturation Voltage :
0.5 V
Configuration :
Single
Emitter- Base Voltage VEBO :
6 V
Gain Bandwidth Product fT :
50 MHz
Maximum DC Collector Current :
-
Maximum Operating Temperature :
+ 200 C
Minimum Operating Temperature :
- 65 C
Mounting Style :
Through Hole
Package / Case :
TO-39-3
Packaging :
Bulk
Pd - Power Dissipation :
10 W
Series :
2N5322
Transistor Polarity :
PNP

Description

Bipolar Transistors - BJT 100Vcbo 100Vcev 2A 75Vceo 6.0Vebo 10W

Price & Procurement

Associated Product

  • Xilinx
    CPLD - Complex Programmable Logic Devices XC2C256-6VQG100C
  • Xilinx
    CPLD - Complex Programmable Logic Devices XC2C256-6TQG144C
  • Xilinx
    CPLD - Complex Programmable Logic Devices 3.3V 36-mc CPLD
  • Xilinx
    CPLD - Complex Programmable Logic Devices XC2C32A-6VQG44C
  • Xilinx
    CPLD - Complex Programmable Logic Devices 3.3V 72-mc CPLD
  • Xilinx
    CPLD - Complex Programmable Logic Devices XC2C64A-7VQG44C
  • Xilinx
    CPLD - Complex Programmable Logic Devices 3.3V 72-mc CPLD
  • Xilinx
    CPLD - Complex Programmable Logic Devices XC2C64A-7VQG44I
  • STMicroelectronics
    Microprocessors - MPU MPU ARM926 Cortex 8-ch DMA 32KB Rom
  • STMicroelectronics
    Embedded - CPLDs (Complex Programmable Logic Devices)

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