Product overview
- Part Number
- 2N5086 TIN/LEAD
- Manufacturer
- Central Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Description
- Bipolar Transistors - BJT PNP 50Vcbo 50Vceo 3.0Vebo 50mA 625mW
Documents & Media
- Datasheets
- 2N5086 TIN/LEAD
Product Attributes
- Collector- Base Voltage VCBO :
- 50 V
- Collector- Emitter Voltage VCEO Max :
- 50 V
- Collector-Emitter Saturation Voltage :
- 625 mW
- Configuration :
- Single
- Emitter- Base Voltage VEBO :
- 3 V
- Gain Bandwidth Product fT :
- 40 MHz
- Maximum DC Collector Current :
- -
- Maximum Operating Temperature :
- + 150 C
- Minimum Operating Temperature :
- - 65 C
- Mounting Style :
- Through Hole
- Package / Case :
- TO-92-3
- Packaging :
- Bulk
- Pd - Power Dissipation :
- 625 mW
- Series :
- 2N5086
- Transistor Polarity :
- PNP
Description
Bipolar Transistors - BJT PNP 50Vcbo 50Vceo 3.0Vebo 50mA 625mW
Price & Procurement
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