Product overview

Part Number
BFN18H6327XTSA1
Manufacturer
Infineon Technologies
Product Category
Bipolar Transistors - BJT
Description
Bipolar Transistors - BJT AF TRANSISTORS

Documents & Media

Datasheets
BFN18H6327XTSA1

Product Attributes

Collector- Base Voltage VCBO :
300 V
Collector- Emitter Voltage VCEO Max :
300 V
Collector-Emitter Saturation Voltage :
500 mV
Configuration :
Single
Emitter- Base Voltage VEBO :
5 V
Gain Bandwidth Product fT :
70 MHz
Maximum DC Collector Current :
500 mA
Maximum Operating Temperature :
+ 150 C
Mounting Style :
SMD/SMT
Package / Case :
SOT-89-4
Packaging :
Cut Tape, MouseReel, Reel
Transistor Polarity :
NPN

Description

Bipolar Transistors - BJT AF TRANSISTORS

Price & Procurement

Associated Product

  • Xilinx
    CPLD - Complex Programmable Logic Devices XC2C256-6VQG100C
  • Xilinx
    CPLD - Complex Programmable Logic Devices XC2C256-6TQG144C
  • Xilinx
    CPLD - Complex Programmable Logic Devices 3.3V 36-mc CPLD
  • Xilinx
    CPLD - Complex Programmable Logic Devices XC2C32A-6VQG44C
  • Xilinx
    CPLD - Complex Programmable Logic Devices 3.3V 72-mc CPLD
  • Xilinx
    CPLD - Complex Programmable Logic Devices XC2C64A-7VQG44C
  • Xilinx
    CPLD - Complex Programmable Logic Devices 3.3V 72-mc CPLD
  • Xilinx
    CPLD - Complex Programmable Logic Devices XC2C64A-7VQG44I
  • STMicroelectronics
    Microprocessors - MPU MPU ARM926 Cortex 8-ch DMA 32KB Rom
  • STMicroelectronics
    Embedded - CPLDs (Complex Programmable Logic Devices)

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