sales@szcinty.com
Product overview
- Part Number
- BFN26E6327HTSA1
- Manufacturer
- Infineon Technologies
- Product Category
- Bipolar Transistors - BJT
- Description
- Bipolar Transistors - BJT NPN Silicon Hi-Volt TRANSISTORS
Documents & Media
- Datasheets
- BFN26E6327HTSA1
Product Attributes
- Collector- Base Voltage VCBO :
- 300 V
- Collector- Emitter Voltage VCEO Max :
- 300 V
- Collector-Emitter Saturation Voltage :
- 0.5 V
- Configuration :
- Single
- Emitter- Base Voltage VEBO :
- 6 V
- Gain Bandwidth Product fT :
- 70 MHz
- Maximum DC Collector Current :
- 500 mA
- Maximum Operating Temperature :
- + 150 C
- Minimum Operating Temperature :
- - 65 C
- Mounting Style :
- SMD/SMT
- Package / Case :
- SOT-23-3
- Packaging :
- Cut Tape, MouseReel, Reel
- Pd - Power Dissipation :
- 360 mW
- Series :
- BFN26
- Transistor Polarity :
- NPN
Description
Bipolar Transistors - BJT NPN Silicon Hi-Volt TRANSISTORS
Price & Procurement
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