Product overview
- Part Number
- MJD31C1G
- Manufacturer
- onsemi
- Product Category
- Bipolar Transistors - BJT
- Description
- Bipolar Transistors - BJT 3A 100V 15W NPN
Documents & Media
- Datasheets
- MJD31C1G
Product Attributes
- Collector- Base Voltage VCBO :
- 100 V
- Collector- Emitter Voltage VCEO Max :
- 100 V
- Collector-Emitter Saturation Voltage :
- 1.2 V
- Configuration :
- Single
- Emitter- Base Voltage VEBO :
- 5 V
- Gain Bandwidth Product fT :
- 3 MHz
- Maximum DC Collector Current :
- 3 A
- Maximum Operating Temperature :
- + 150 C
- Minimum Operating Temperature :
- - 65 C
- Mounting Style :
- Through Hole
- Package / Case :
- IPAK-3
- Packaging :
- Tube
- Pd - Power Dissipation :
- 1.56 W
- Series :
- MJD31C
- Transistor Polarity :
- NPN
Description
Bipolar Transistors - BJT 3A 100V 15W NPN
Price & Procurement
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