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Product overview
- Part Number
- SBC847BPDXV6T1G
- Manufacturer
- onsemi
- Product Category
- Bipolar Transistors - BJT
- Description
- Bipolar Transistors - BJT SS SOT563 GP XSTR PNP 40V
Documents & Media
- Datasheets
- SBC847BPDXV6T1G
Product Attributes
- Collector- Base Voltage VCBO :
- 50 V
- Collector- Emitter Voltage VCEO Max :
- - 45 V, 45 V
- Collector-Emitter Saturation Voltage :
- 250 mV
- Configuration :
- Dual
- Emitter- Base Voltage VEBO :
- -5 V, 6 V
- Gain Bandwidth Product fT :
- 100 MHz
- Maximum DC Collector Current :
- 15 nA
- Maximum Operating Temperature :
- + 150 C
- Minimum Operating Temperature :
- - 55 C
- Mounting Style :
- SMD/SMT
- Package / Case :
- SOT-563-6
- Packaging :
- Cut Tape, MouseReel, Reel
- Pd - Power Dissipation :
- 357 mW, 500 mW
- Qualification :
- AEC-Q101
- Series :
- BC847BPDXV6
- Transistor Polarity :
- NPN
Description
Bipolar Transistors - BJT SS SOT563 GP XSTR PNP 40V
Price & Procurement
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