sales@szcinty.com
Product overview
- Part Number
- TTD1409B,S4X
- Manufacturer
- Toshiba
- Product Category
- Bipolar Transistors - BJT
- Description
- Bipolar Transistors - BJT PWR MOS PD=25W F=1MHZ
Documents & Media
- Datasheets
- TTD1409B,S4X
Product Attributes
- Collector- Base Voltage VCBO :
- 160 V
- Collector- Emitter Voltage VCEO Max :
- 80 V
- Collector-Emitter Saturation Voltage :
- 0.3 V
- Configuration :
- Single
- Emitter- Base Voltage VEBO :
- 7 V
- Gain Bandwidth Product fT :
- 150 MHz
- Maximum DC Collector Current :
- 4 A
- Maximum Operating Temperature :
- + 150 C
- Minimum Operating Temperature :
- - 55 C
- Mounting Style :
- Through Hole
- Package / Case :
- TO-126N-3
- Packaging :
- Tube
- Series :
- TTD1409B
- Transistor Polarity :
- NPN
Description
Bipolar Transistors - BJT PWR MOS PD=25W F=1MHZ
Price & Procurement
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