Product overview
- Part Number
- RT1210DRE07510RL
- Manufacturer
- YAGEO
- Product Category
- Thin Film Resistors - SMD
- Description
- Thin Film Resistors - SMD
Documents & Media
- Datasheets
- RT1210DRE07510RL
Product Attributes
- Case Code - in :
- 1210
- Case Code - mm :
- 3224
- Maximum Operating Temperature :
- + 125 C
- Minimum Operating Temperature :
- - 55 C
- Packaging :
- Cut Tape, MouseReel, Reel
- Power Rating :
- 500 mW (1/2 W)
- Resistance :
- 510 Ohms
- Series :
- RT
- Temperature Coefficient :
- 50 PPM / C
- Tolerance :
- 0.5 %
- Voltage Rating :
- 200 V
Description
Thin Film Resistors - SMD
Price & Procurement
Associated Product
You May Also Be Interested In
Part | Manufacturer | Stock | Description |
---|---|---|---|
STD3N95K5AG | STMicroelectronics | 4,962 | MOSFET PTD HIGH VOLTAGE |
IRF1010NPBF | Infineon Technologies | 3,880 | MOSFET MOSFT 55V 72A 11mOhm 80nC |
IRFH5210TRPBF | Infineon Technologies | 24,000 | MOSFET 100V 1 N-CH HEXFET 14.9mOhms 39nC |
FDD13AN06A0 | onsemi / Fairchild | 4,875 | MOSFET N-Channel PwrTrench |
IRF9310TRPBF | Infineon Technologies | 17,683 | MOSFET MOSFT P-Ch -30V -20A 4.6mOhm |
SI7139DP-T1-GE3 | Vishay Semiconductors | 12,000 | MOSFET -30V Vds 20V Vgs PowerPAK SO-8 |
FDMC86102L | onsemi / Fairchild | 5,950 | MOSFET 100V N-Channel PowerTrench MOSFET |
FDS3890 | onsemi / Fairchild | 9,652 | MOSFET SO-8 |
BSC026N04LSATMA1 | Infineon Technologies | 10,000 | MOSFET TRENCH <= 40V |
STD26NF10 | STMicroelectronics | 10,000 | MOSFET N Ch 100V 0.033 Ohm 25A |
BUK7Y4R8-60EX | Nexperia | 14,639 | MOSFET N-channel 60 V 4.8 mo FET |
BUK9Y4R8-60E,115 | Nexperia | 2,990 | MOSFET N-channel 60 V 4.8 mo FET |
IRF9530PBF | Vishay Semiconductors | 3,374 | MOSFET 100V P-CH HEXFET MOSFET |
FDS8935 | onsemi / Fairchild | 2,500 | MOSFET -80V Dual P-Channel PowerTrench MOSFET |
FDMS8333L | onsemi / Fairchild | 11,907 | MOSFET NChan 40V 76A 69W PowerTrench MOSFET |