Product overview
- Part Number
- H4P3K01DZA
- Manufacturer
- TE Connectivity / Holsworthy
- Product Category
- Metal Film Resistors - Through Hole
- Description
- Metal Film Resistors - Through Hole H4P 3K01 0.5% 100PPM
Documents & Media
- Datasheets
- H4P3K01DZA
Product Attributes
- Diameter :
- 3.7 mm
- Length :
- 10 mm
- Maximum Operating Temperature :
- + 155 C
- Minimum Operating Temperature :
- - 55 C
- Packaging :
- Bulk
- Power Rating :
- 1 W
- Resistance :
- 3.01 kOhms
- Series :
- H4P
- Temperature Coefficient :
- 100 PPM / C
- Termination Style :
- Axial
- Tolerance :
- 0.5 %
Description
Metal Film Resistors - Through Hole H4P 3K01 0.5% 100PPM
Price & Procurement
Associated Product
You May Also Be Interested In
Part | Manufacturer | Stock | Description |
---|---|---|---|
CSD17483F4T | Texas Instruments | 3,770 | MOSFET 30V,N-Ch FemtoFET MOSFET |
SQ3419AEEV-T1_GE3 | Vishay / Siliconix | 2,538 | MOSFET -40V Vds TSOP-6 AEC-Q101 Qualified |
VN3205N3-G | Microchip Technology | 1,573 | MOSFET 50V 0.3Ohm |
SI1965DH-T1-E3 | Vishay / Siliconix | 1,468 | MOSFET -12V Vds 8V Vgs SC70-6 |
FDMS86350 | onsemi / Fairchild | 706 | MOSFET FET 80V 2.4 MOHM PQFN56 |
SQJ158EP-T1_GE3 | Vishay / Siliconix | 2,950 | MOSFET N-Channel 60V PowerPAK SO-8L |
CSD19534KCS | Texas Instruments | 638 | MOSFET 100V N-Channel NexFET Pwr MOSFET |
FCB36N60NTM | onsemi / Fairchild | 198 | MOSFET 600V NChannel MOSFET SupreMOST |
FDP8N50NZ | onsemi / Fairchild | 317 | MOSFET UNIFET2 500V |
NTJS4405NT1G | onsemi | 5,991 | MOSFET 25V 1.2A N-Channel |
SQJB70EP-T1_GE3 | Vishay / Siliconix | 1,325 | MOSFET Dual N-Ch 100V AEC-Q101 Qualified |
FDD5N50NZTM | onsemi / Fairchild | 801 | MOSFET UNIFET2 500V |
SQ4940AEY-T1_GE3 | Vishay Semiconductors | 2,009 | MOSFET 40V 8A 4W AEC-Q101 Qualified |
SIR696DP-T1-GE3 | Vishay Semiconductors | 2,163 | MOSFET 125V Vds 20V Vgs PowerPAK SO-8 |
NX7002AK,215 | Nexperia | 68,266 | MOSFET 60 V, single N-chan Trench MOSFET |